[Abstract]

The lack of high-performance p-type semiconducting materials hinders the integration of complementary metaloxide

semiconductors with well-established n-type metal-oxide counterparts. Although tin halide perovskites are

promising p-type material candidates, their practical implementation is hindered by excessive hole concentrations

and difficulties in precisely controlling crystallization, which leads to poor device performance and yield. In

this paper, we propose a formate pseudohalide engineering method to overcome these issues and demonstrate

high-performance tin perovskite thin-film transistors (TFTs). The incorporation of formate anion greatly suppresses

the vacancy defects at the surfaces of the perovskite films with an increase in crystallinity and grain size.

This reduces the hole concentration and eliminates the dependence on the addition of excessive tin fluoride for

hole suppression. Hence, high-performance TFTs with a high average field-effect hole mobility of 57.34 cm^2 V^-1

s^-1 and on/off current ratios surpassing 10^8 can be achieved, approaching p-channel low-temperature polysilicon

devices.

DOI: 10.1016/j.mser.2024.100806

LINK: https://www.sciencedirect.com/science/article/abs/pii/S0927796X24000366?via%3Dihub