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A new etching process for zinc oxide with etching rate and crystal plane control: experiment, calculation, and membrane application

Title of paper
A new etching process for zinc oxide with etching rate and crystal plane control: experiment, calculation, and membrane application
Author
[한정우교수 연구실]
Publication in journal
Nanoscale 11, p12337-12346, 2019
Publication date
20190707

[Abstract]

The etching process can be a useful method for the morphology control of nanostructures. Using precise experiments and theoretical calculations, we report a new ZnO etching process triggered by the reaction of ZnO with transition metal cations and demonstrate that the etching rate and direction could be controlled by varying the kind of transition metal cation. In addition, the developed etching process was introduced to form a thin and uniform ZnO layer, which was utilized for the fabrication of an improved propylene-selective ZIF-8 membrane via conversion seeding and secondary growth.

 

DOI: 10.1039/C9NR02248A

LINK: https://pubs.rsc.org/en/journals/journalissues/nr#!issueid=nr011025&type=current&issnprint=2040-3364