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미래를 창조하는 포스텍 화학공학과

High-performance inorganic metal halide perovskite transistors

Title of paper
High-performance inorganic metal halide perovskite transistors
Author
[노용영 교수] 인쇄공정을 통한 고성능 무기 금속 할라이드 페로브스카이트 트랜지스터 개발
Publication in journal
Nature Electronics volume 5, pages78–83 (2022)
Publication date
20220217

[Abstract]


The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor with lead substitution. The optimized transistors exhibit field-effect hole mobilities of over 50 cm2 V−1 s−1 and on/off current ratios exceeding 108, as well as high operational stability and reproducibility.

 

DOI: 10.1038/s41928-022-00712-2
LINK: https://www.nature.com/articles/s41928-022-00712-2