미래를 창조하는 포스텍 화학공학과
Two Dimensional Materials for Electronic Devices
- 2017.11.20(월) 17:00~
- 박성준 상무
Two dimensional (2D) materials are crystalline materials with layered structures, including Graphene, h-BN, and Transition Metal Di-chalcogenides (TMD's). Each of their layers is consisting of a few atomci layers and they form van der Waals interactions with neighboring layers. Atomically thin 2D materials range from semi-metallic graphene, semiconducting TMD's to insulating h-BN. They have been studied intensively due to their extroadinary material properties.
We have investigated 2D materials in two directions. One is to enhance the performance and the processibility of Si technology for near term applications. Especially, we have focused 2D materials at interface materials due to their atomically thin nature. For example, they are good candidates for diffusion barrier and interface materials between metal and Si to reduce the Schottky barrier heights and contact resistance in source and drain, which is one of the most critical issues for scaling down. We demonstrated a grapheen hybrid interconnect for conventional Si semiconducting devices and demonstrated converting the Schottky nature of the M-S jucntions into Ohomic contact with 2D materials.
The other direction is to replace Si with 2D materials for post Si technology and for functional devices tha Si canno cover well. We explored the possibility of 2D materials for photo detector and sub 10nm Graphene Nanoribons (GNR) for a transistor channel. Also we demonstrated atomic layer deposition (ALD) on Graphene, one of the most fundamental challenges for the successful incorporation of 2D materials in electronic devices using physisorbed-precursor-assisted ALD.